IGBT Transistors - Kaimeite

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3 products

PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRG4PH50S-EPBF	1+ $5.640 10+ $4.790 25+ $4.710 100+ $4.150		PDF RFQ	250 In-stock	Infineon Technologies	IGBT Transistors 1200V DC-1kHz w/ exetended lead	Through Hole	TO-247AD-3		Tube	200 W	Single	1.2 kV	1.7 V	57 A		+/- 20 V
IRG4PC50F-EPBF	4000+ $2.770	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT Transistors 600V Fast IGBT GEN 4 1 to 5kHz 1.45V 39A	Through Hole	TO-247AD-3		Tube	200 W	Single	600 V	1.45 V	70 A		+/- 20 V
IRGP6640D-EPBF	1+ $5.290 10+ $4.500 25+ $4.420 100+ $3.900		PDF RFQ	151 In-stock	IR / Infineon	IGBT Transistors 600V UltraFast IGBT TO-247	Through Hole	TO-247AD-3	+ 175 C	Tube	200 W	Single	600 V	1.65 V	53 A	100 nA	20 V