- Manufacture :
- Package / Case :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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622
In-stock
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IR / Infineon | IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.5 V | 60 A | +/- 20 V | |||||
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265
In-stock
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Infineon Technologies | IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.5 V | 60 A | +/- 20 V | |||||
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300
In-stock
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Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.5 V | 49 A | 100 nA | +/- 20 V |