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Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGP40V60F
1+
$2.760
10+
$2.340
100+
$2.030
250+
$1.930
RFQ
4,326
In-stock
STMicroelectronics IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT Through Hole TO-220-3 + 175 C Tube 283 W Single 600 V 2.35 V 80 A   +/- 20 V
STGW40V60DF
1+
$4.430
10+
$3.770
100+
$3.270
250+
$3.100
RFQ
353
In-stock
STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT Through Hole TO-247 + 175 C Tube 283 W Single 600 V 2.35 V 80 A 250 nA 20 V
STGW40V60F
1+
$4.050
10+
$3.450
100+
$2.990
250+
$2.840
RFQ
377
In-stock
STMicroelectronics IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT Through Hole TO-247-3 + 175 C Tube 283 W Single 600 V 2.35 V 80 A   +/- 20 V
STGWT40V60DF
1+
$4.990
10+
$4.010
100+
$3.560
250+
$3.290
RFQ
135
In-stock
STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT Through Hole TO-3P + 175 C Tube 283 W Single 600 V 2.35 V 80 A 250 nA 20 V
STGW40V60DLF
1+
$4.030
10+
$3.240
100+
$2.880
250+
$2.660
RFQ
511
In-stock
STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT Through Hole TO-247 + 175 C Tube 283 W Single 600 V 2.35 V 80 A 250 nA 20 V
STGWT40V60DLF
1+
$4.340
10+
$3.490
100+
$3.100
250+
$2.860
RFQ
294
In-stock
STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT Through Hole TO-3P + 175 C Tube 283 W Single 600 V 2.35 V 80 A 250 nA 20 V
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