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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
HGTG10N120BND
1+
$4.160
10+
$3.540
100+
$3.070
250+
$2.910
RFQ
203
In-stock
Fairchild Semiconductor IGBT Transistors 35A 1200V N-Ch Through Hole TO-247-3 + 150 C Tube 298 W Single 1200 V 2.45 V 17 A +/- 250 nA +/- 20 V
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