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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGA20S125P_SN00336
1+
$2.510
10+
$2.130
100+
$1.700
500+
$1.490
RFQ
1,732
In-stock
Fairchild Semiconductor IGBT Transistors 1250V 20A Shorted Anode IGBT Through Hole TO-3 + 175 C Tube 250 W Single 1.25 kV 2 V 40 A +/- 500 nA +/- 25 V
STGWT20H60DF
1+
$3.150
10+
$2.680
100+
$2.330
250+
$2.210
RFQ
600
In-stock
STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop Through Hole TO-3P-3 + 175 C Tube 167 W Single 600 V 2 V 40 A 250 nA 20 V
STGW20H60DF
1+
$2.930
10+
$2.490
100+
$2.160
250+
$2.050
RFQ
592
In-stock
STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop Through Hole TO-247-3 + 175 C Tube 167 W Single 600 V 2 V 40 A 250 nA 20 V
STGP20H60DF
1+
$3.000
10+
$2.420
100+
$1.940
250+
$1.840
RFQ
950
In-stock
STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT Through Hole TO-220 + 175 C Tube 167 W Single 600 V 2 V 40 A 250 nA 20 V
STGF20H60DF
1+
$3.240
10+
$2.600
100+
$2.370
250+
$2.130
RFQ
767
In-stock
STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT Through Hole TO-220-3 FP + 175 C Tube 37 W Single 600 V 2 V 40 A 250 nA 20 V
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