- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,732
In-stock
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Fairchild Semiconductor | IGBT Transistors 1250V 20A Shorted Anode IGBT | Through Hole | TO-3 | + 175 C | Tube | 250 W | Single | 1.25 kV | 2 V | 40 A | +/- 500 nA | +/- 25 V | |||
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600
In-stock
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STMicroelectronics | IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop | Through Hole | TO-3P-3 | + 175 C | Tube | 167 W | Single | 600 V | 2 V | 40 A | 250 nA | 20 V | |||
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592
In-stock
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STMicroelectronics | IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop | Through Hole | TO-247-3 | + 175 C | Tube | 167 W | Single | 600 V | 2 V | 40 A | 250 nA | 20 V | |||
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950
In-stock
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STMicroelectronics | IGBT Transistors 600V 20A High Speed Trench Gate IGBT | Through Hole | TO-220 | + 175 C | Tube | 167 W | Single | 600 V | 2 V | 40 A | 250 nA | 20 V | |||
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767
In-stock
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STMicroelectronics | IGBT Transistors 600V 20A High Speed Trench Gate IGBT | Through Hole | TO-220-3 FP | + 175 C | Tube | 37 W | Single | 600 V | 2 V | 40 A | 250 nA | 20 V |