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Package / Case :
Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGW20V60F
1+
$3.050
10+
$2.590
100+
$2.250
250+
$2.130
RFQ
588
In-stock
STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop Through Hole TO-247-3 + 175 C Tube 167 W Single 600 V 1.8 V 40 A 250 nA 20 V
IHW20N120R3
1+
$3.360
10+
$2.860
100+
$2.480
250+
$2.350
RFQ
3,080
In-stock
Infineon Technologies IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body Through Hole TO-247-3 + 175 C Tube 310 W Single 1200 V 1.8 V 40 A 100 nA 20 V
Default Photo
1+
$3.360
10+
$2.860
100+
$2.480
250+
$2.350
RFQ
233
In-stock
Infineon Technologies IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body Through Hole TO-247-3 + 175 C Tube 310 W Single 1200 V 1.8 V 40 A 100 nA 20 V
HGTG20N60B3
1+
$4.380
10+
$3.730
100+
$3.230
250+
$3.070
RFQ
91
In-stock
Fairchild Semiconductor IGBT Transistors 600V N-Channel IGBT UFS Series Through Hole TO-247-3 + 150 C Tube 165 W Single 600 V 1.8 V 40 A +/- 100 nA +/- 20 V
Default Photo
1+
$3.170
10+
$2.700
100+
$2.340
250+
$2.220
RFQ
278
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3PF + 175 C Tube 52 W Single 600 V 1.8 V 40 A 250 nA +/- 20 V
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