- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
353
In-stock
|
STMicroelectronics | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | Through Hole | TO-247 | + 175 C | Tube | 283 W | Single | 600 V | 2.35 V | 80 A | 250 nA | 20 V | ||||
|
411
In-stock
|
STMicroelectronics | IGBT Transistors 600V 60A High Speed Trench Gate IGBT | Through Hole | TO-247 | + 175 C | Tube | 375 W | Single | 600 V | 2.35 V | 80 A | 250 nA | 20 V | ||||
|
374
In-stock
|
Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247 | + 175 C | Tube | 333 W | Single | 1100 V | 1.55 V | 60 A | 100 nA | 20 V | ||||
|
157
In-stock
|
STMicroelectronics | IGBT Transistors 600V 20A High Speed Trench Gate IGBT | Through Hole | TO-247 | + 175 C | Tube | 167 W | Single | 600 V | 2.3 V | 40 A | 250 nA | 20 V | ||||
|
132
In-stock
|
Fairchild Semiconductor | IGBT Transistors 650V 150A 187W | Through Hole | TO-247 | + 175 C | Tube | 187 W | Single | 650 V | 2.3 V | 150 A | 400 nA | 20 V | ||||
|
412
In-stock
|
STMicroelectronics | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | Through Hole | TO-247 | + 175 C | Tube | 258 W | Single | 600 V | 2.35 V | 60 A | 250 nA | 20 V | ||||
|
354
In-stock
|
STMicroelectronics | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | Through Hole | TO-247 | + 175 C | Tube | 260 W | Single | 600 V | 2.4 V | 60 A | 250 nA | 20 V | ||||
|
1,137
In-stock
|
onsemi | IGBT Transistors 1200V/50A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 535 W | Single | 1200 V | 2.2 V | 100 A | 200 nA | 30 V | ||||
|
333
In-stock
|
onsemi | IGBT Transistors 1350V/20A IGBT FSII TO-24 | Through Hole | TO-247 | + 175 C | Tube | 394 W | Single | 1350 V | 2.2 V | 40 A | 100 nA | 25 V | ||||
|
510
In-stock
|
onsemi | IGBT Transistors 1200V/20A RC IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 384 W | Single | 1200 V | 2.1 V | 40 A | 100 nA | 20 V | ||||
|
74
In-stock
|
onsemi | IGBT Transistors 1200V/30A LOW VCE SAT FSII | Through Hole | TO-247 | + 175 C | Tube | 534 W | Single | 1200 V | 1.7 V | 60 A | 200 nA | 30 V | ||||
|
GET PRICE |
9,800
In-stock
|
onsemi | IGBT Transistors 1200V/40A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 535 W | Single | 1200 V | 2 V | 80 A | 200 nA | 30 V | |||
|
90
In-stock
|
onsemi | IGBT Transistors 1350V/40A IGBT FSII TO-24 | Through Hole | TO-247 | + 175 C | Tube | 394 W | Single | 1350 V | 2.4 V | 80 A | 100 nA | 25 V | ||||
|
201
In-stock
|
onsemi | IGBT Transistors 1200V/40A RC IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 384 W | Single | 1200 V | 2.3 V | 80 A | 100 nA | 25 V | ||||
|
140
In-stock
|
onsemi | IGBT Transistors 1200V/30A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 452 W | Single | 1200 V | 2 V | 60 A | 200 nA | 30 V | ||||
|
161
In-stock
|
onsemi | IGBT Transistors 1200V/30A RC IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 384 W | Single | 1200 V | 2.2 V | 60 A | 100 nA | 25 V | ||||
|
162
In-stock
|
onsemi | IGBT Transistors 1350V/30A IGBT FSII TO-24 | Through Hole | TO-247 | + 175 C | Tube | 394 W | Single | 1350 V | 2.3 V | 60 A | 100 nA | 25 V | ||||
|
511
In-stock
|
STMicroelectronics | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | Through Hole | TO-247 | + 175 C | Tube | 283 W | Single | 600 V | 2.35 V | 80 A | 250 nA | 20 V |