- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Gate Emitter Voltage :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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707
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 10-30kHz | Through Hole | TO-220-3 | + 150 C | Tube | 156 W | Single | 600 V | 1.8 V | 35 A | 100 nA | +/- 20 V | ||||
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139
In-stock
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IXYS | IGBT Transistors XPT IGBT B3-Class 600V/210Amp | Through Hole | TO-247AD | + 150 C | Tube | 830 W | 600 V | 1.8 V | 210 A | 100 nA | 20 V | |||||
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1,310
In-stock
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IXYS | IGBT Transistors 75 Amps 600V 1.05 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | Single | 600 V | 1.8 V | 100 nA | +/- 20 V | |||||
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204
In-stock
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Infineon Technologies | IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 156 W | Single | 600 V | 1.8 V | 35 A | 100 nA | +/- 20 V | ||||
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51
In-stock
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IXYS | IGBT Transistors XPT IGBT B3-Class 600V/190Amp CoPacked | Through Hole | TO-264-3 | + 150 C | Tube | 695 W | 600 V | 1.8 V | 190 A | 100 nA | 20 V | |||||
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210
In-stock
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onsemi | IGBT Transistors 600V/30A IGBT FS1 IH TO | Through Hole | TO-247 | + 150 C | Tube | 250 W | Single | 600 V | 1.8 V | 60 A | 100 nA | 20 V | ||||
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VIEW | IXYS | IGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | 600 V | 1.8 V | 75 A | 100 nA | +/- 20 V |