Build a global manufacturer and supplier trusted trading platform.
Pd - Power Dissipation :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXGH36N60B3D1
1+
$6.010
10+
$5.430
25+
$5.180
100+
$4.500
RFQ
63
In-stock
IXYS IGBT Transistors 36 Amps 600V Through Hole TO-247 + 150 C Tube 250 W Single 600 V 1.8 V 200 A +/- 100 nA +/- 20 V
NGTB30N60IHLWG
1+
$4.290
10+
$3.650
100+
$3.160
250+
$3.000
RFQ
210
In-stock
onsemi IGBT Transistors 600V/30A IGBT FS1 IH TO Through Hole TO-247 + 150 C Tube 250 W Single 600 V 1.8 V 60 A 100 nA 20 V
STGWA19NC60HD
1+
$2.000
10+
$2.000
100+
$2.000
250+
$1.000
RFQ
6,000
In-stock
STMicroelectronics IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode Through Hole TO-247 + 150 C Tube 208 W Single 600 V 1.8 V 52 A +/- 100 nA +/- 20 V
STGW50H60DF
1+
$4.680
10+
$3.980
25+
$3.910
100+
$3.450
RFQ
11
In-stock
STMicroelectronics IGBT Transistors 50A 600V FST IGBT Ultrafast Diode Through Hole TO-247 + 150 C Tube 360 W     1.8 V 100 A 250 nA +/- 20 V
Page 1 / 1