- Mounting Style :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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731
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.15 V | 40 A | 100 nA | 20 V | ||||
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687
In-stock
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Fairchild Semiconductor | IGBT Transistors N-Ch 20A 600V FS IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 165 W | Single | 600 V | 2.2 V | 40 A | +/- 400 nA | +/- 20 V | ||||
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GET PRICE |
57,400
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp2 150kHz | Through Hole | TO-220-3 | + 150 C | Tube | 215 W | Single | 600 V | 2.05 V | 40 A | 100 nA | +/- 20 V | |||
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GET PRICE |
2,710
In-stock
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onsemi | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-3P-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.1 V | 40 A | +/- 100 nA | +/- 20 V | |||
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77
In-stock
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Fairchild Semiconductor | IGBT Transistors 40A/600V/ IGBT | Through Hole | TO-3PF-3 | + 150 C | Tube | 100 W | Single | 600 V | 3 V | 40 A | 100 nA | +/- 20 V | ||||
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202
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz Single IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | Single | 1.2 kV | 3.05 V | 40 A | 100 nA | +/- 20 V | ||||
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309
In-stock
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Infineon Technologies | IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.05 V | 40 A | 100 nA | +/- 20 V | ||||
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115
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-262-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.5 V | 40 A | +/- 20 V | |||||
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280
In-stock
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IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A | Through Hole | TO-220AB-3 | + 150 C | Tube | 180 W | Single | 1.2 kV | 2.3 V | 40 A | 100 nA | +/- 20 V | ||||
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29
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.72 V | 40 A | 100 nA | +/- 20 V | ||||
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38
In-stock
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IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A | Through Hole | TO-247-3 | + 150 C | Tube | 180 W | Single | 1.2 kV | 2.3 V | 40 A | 100 nA | +/- 20 V | ||||
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91
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT UFS Series | Through Hole | TO-247-3 | + 150 C | Tube | 165 W | Single | 600 V | 1.8 V | 40 A | +/- 100 nA | +/- 20 V | ||||
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190
In-stock
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onsemi | IGBT Transistors 1200/20A IGBT LPT TO-24 | Through Hole | TO-247 | + 150 C | Tube | 156 W | Single | 1200 V | 2.5 V | 40 A | 100 nA | +/- 20 V | ||||
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VIEW | Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | Single | 1.2 kV | 3.05 V | 40 A | +/- 20 V | |||||
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VIEW | Fairchild Semiconductor | IGBT Transistors Ultrafast | Through Hole | TO-3PF-3 | + 150 C | Tube | 100 W | Single | 600 V | 3.1 V | 40 A | +/- 100 nA | +/- 20 V | ||||
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251
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 180 W | Single | 1200 V | 1.7 V | 40 A | 100 nA | 30 V | ||||
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143
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AD-3 | + 150 C | Tube | 180 W | Single | 1200 V | 1.7 V | 40 A | 100 nA | 30 V |