- Manufacture :
- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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223
In-stock
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IXYS | IGBT Transistors High Voltage IGBT 2500V; 19A | Through Hole | ISOPLUS i4-PAC-3 | + 150 C | Tube | 250 W | Single | 2.5 kV | 3.2 V | 32 A | 500 nA | +/- 20 V | |||
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99
In-stock
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IXYS | IGBT Transistors VRY HI VOLT NPT IGBT 1700V, 72A | Through Hole | TO-247-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 4 V | 32 A | 100 nA | +/- 20 V | |||
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30
In-stock
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IXYS | IGBT Transistors 32 Amps 1700 V 3.5 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 190 W | Single | 1.7 kV | 2.7 V | 32 A | 100 nA | +/- 20 V | |||
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23
In-stock
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IXYS | IGBT Transistors 32 Amps 1700 V 3.5 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1.7 kV | 2.7 V | 32 A | 100 nA | +/- 20 V | |||
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50
In-stock
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IXYS | IGBT Transistors 20 Amps 600V | Through Hole | TO-220-3 | + 150 C | Tube | 140 W | Single | 600 V | 2.2 V | 32 A | 500 nA | +/- 20 V | |||
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49
In-stock
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IXYS | IGBT Transistors 20 Amps 600V | Through Hole | TO-220-3 | + 150 C | Tube | 140 W | Single | 600 V | 2.2 V | 32 A | 500 nA | +/- 20 V | |||
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396
In-stock
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Fairchild Semiconductor | IGBT Transistors Dis Short Circuit Rated IGBT | Through Hole | TO-3P-3 | + 150 C | Tube | 195 W | Single | 600 V | 2.2 V | 32 A | +/- 100 nA | +/- 20 V | |||
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13
In-stock
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IXYS | IGBT Transistors 24 Amps 1700V 5 Rds | Through Hole | PLUS 247-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 4 V | 32 A | 100 nA | +/- 20 V |
