IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IXDH30N120D1	1+ $11.780 10+ $10.650 25+ $10.150 100+ $8.820		PDF RFQ	80 In-stock	IXYS	IGBT Transistors 30 Amps 1200V	Through Hole	TO-247-3	+ 150 C	Tube	300 W	Single	1.2 kV	2.4 V	60 A	500 nA	+/- 20 V
	IXDH30N120	1+ $10.140 10+ $9.160 25+ $8.740 100+ $7.590		PDF RFQ	35 In-stock	IXYS	IGBT Transistors 30 Amps 1200V	Through Hole	TO-247-3	+ 150 C	Tube	300 W	Single	1.2 kV	2.4 V	60 A	500 nA	+/- 20 V

IXDH30N120D1

IXDH30N120D1

IXYS

IGBT Transistors 30 Amps 1200V

Stock : 80

1+: $11.780

10+: $10.650

25+: $10.150

100+: $8.820

IXDH30N120

IXDH30N120

IXYS

IGBT Transistors 30 Amps 1200V

Stock : 35

1+: $10.140

10+: $9.160

25+: $8.740

100+: $7.590

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