- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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493
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/40A Field Stop IGBT ver. 2 | Through Hole | TO-247 | + 150 C | Tube | 349 W | 600 V | 1.9 V | 80 A | 400 nA | 20 V | ||||
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3,620
In-stock
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Infineon Technologies | IGBT Transistors 600V 40A 306W | Through Hole | TO-247-3 | + 150 C | Tube | 306 W | 600 V | 1.95 V | 80 A | 100 nA | 20 V | ||||
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72
In-stock
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Fairchild Semiconductor | IGBT Transistors N-CH / 40A 600V FS Planar | Through Hole | TO-247 | + 150 C | Tube | 290 W | Single | 600 V | 2.3 V | 80 A | 400 nA | 20 V | |||
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190
In-stock
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Infineon Technologies | IGBT Transistors 600V 40A 306W | Through Hole | TO-247 | + 150 C | Tube | 306 W | 600 V | 1.95 V | 80 A | 100 nA | 20 V | ||||
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122
In-stock
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onsemi | IGBT Transistors 1200V/40A FS1 IGBT IH | Through Hole | TO-247 | + 150 C | Tube | 260 W | Single | 1200 V | 1.9 V | 80 A | 200 nA | 20 V | |||
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180
In-stock
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onsemi | IGBT Transistors 600V/40A IGBT FS1 IH TO | Through Hole | TO-247 | + 150 C | Tube | 250 W | Single | 600 V | 2 V | 80 A | 100 nA | 20 V | |||
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117
In-stock
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onsemi | IGBT Transistors 1200V/40A FS1 IGBT | Through Hole | TO-247 | + 150 C | Tube | 260 W | Single | 1200 V | 1.9 V | 80 A | 200 nA | 20 V |
