PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
APT25GT120BRG	1+ $7.320 10+ $6.590 25+ $6.000 100+ $5.420	PDF RFQ	125 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ...	Through Hole	TO-247-3	+ 150 C	Tube	347 W	Single	1.2 kV	3.2 V	54 A	120 nA	30 V
APT45GP120BG	1+ $19.780 10+ $17.980 25+ $16.630 50+ $15.730	PDF RFQ	22 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C	Tube	625 W	Single	1.2 kV	3.3 V	100 A	100 nA	30 V
APT33GF120BRG	1+ $10.370 10+ $9.330 25+ $8.500 50+ $7.920	PDF RFQ	35 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ...	Through Hole	TO-247-3	+ 150 C	Tube	297 W	Single	1.2 kV	2.5 V	52 A	100 nA	30 V
APT45GP120B2DQ2G	1+ $20.630 5+ $19.710 10+ $19.090 25+ $17.540	PDF RFQ	24 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	T-MAX-3	+ 150 C	Tube	625 W	Single	1.2 kV	3.3 V	113 A	100 nA	30 V
APT35GN120BG	1+ $9.520 10+ $8.570 25+ $7.810 50+ $7.270	PDF RFQ	15 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-247-3	+ 150 C	Tube	379 W	Single	1.2 kV	1.7 V	94 A	600 nA	30 V