- Manufacture :
- Mounting Style :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
28 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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204
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack | Through Hole | TO-264-3 | + 150 C | Tube | 1040 W | Single | 1200 V | 2.75 V | 164 A | 100 nA | 30 V | |||
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35
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 500 W | Single | 1200 V | 2.75 V | 105 A | 100 nA | 30 V | |||
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180
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1200 V | 4.2 V | 90 A | 100 nA | 30 V | |||
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30
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 230 W | Single | 1200 V | 4 V | 36 A | 100 nA | 30 V | |||
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97
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 600 V | 2 V | 64 A | 100 nA | 30 V | |||
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22
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1.2 kV | 3.3 V | 100 A | 100 nA | 30 V | |||
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28
In-stock
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IXYS | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT | SMD/SMT | SOT-227 | + 150 C | Tube | 750 W | Single | 650 V | 2.1 V | 215 A | 100 nA | 30 V | |||
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35
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 297 W | Single | 1.2 kV | 2.5 V | 52 A | 100 nA | 30 V | |||
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28
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/105A | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1200 V | 2.5 V | 105 A | 100 nA | 30 V | |||
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63
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 480 W | Single | 1200 V | 4.8 V | 64 A | 100 nA | 30 V | |||
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24
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | T-MAX-3 | + 150 C | Tube | 625 W | Single | 1.2 kV | 3.3 V | 113 A | 100 nA | 30 V | |||
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22
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | SMD/SMT | TO-264-3 | + 150 C | Tube | 625 W | Single | 600 V | 2 V | 143 A | 100 nA | 30 V | |||
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52
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/160A | Through Hole | TO-247-3 | + 150 C | Tube | 1040 W | Single | 1200 V | 2.75 V | 160 A | 100 nA | 30 V | |||
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28
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 105 W | Single | 1200 V | 4 V | 21 A | 100 nA | 30 V | |||
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39
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 416 W | Single | 1200 V | 3.7 V | 66 A | 100 nA | 30 V | |||
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48
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-264-3 | + 150 C | Tube | 500 W | Single | 900 V | 2.5 V | 117 A | 100 nA | 30 V | |||
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13
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 600 V | 2 V | 143 A | 100 nA | 30 V | |||
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252
In-stock
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onsemi | IGBT Transistors 600V/30A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 167 W | Single | 600 V | 1.45 V | 60 A | 100 nA | 30 V | |||
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152
In-stock
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onsemi | IGBT Transistors IGBT 600V 40A FS1 Solar/UPS | Through Hole | TO-247 | + 150 C | Tube | 257 W | Single | 600 V | 1.85 V | 80 A | 100 nA | 30 V | |||
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30
In-stock
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IXYS | IGBT Transistors 1200V XPT GenX3 IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 500 W | Single | 1200 V | 3.7 V | 75 A | 100 nA | 30 V | |||
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210
In-stock
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onsemi | IGBT Transistors 600V/30A IGBT LPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 250 W | Single | 600 V | 1.65 V | 60 A | 100 nA | 30 V | |||
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204
In-stock
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onsemi | IGBT Transistors 600V/30A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 167 W | Single | 600 V | 1.45 V | 60 A | 100 nA | 30 V | |||
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251
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 180 W | Single | 1200 V | 1.7 V | 40 A | 100 nA | 30 V | |||
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85
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 125 W | Single | 1200 V | 1.7 V | 30 A | 100 nA | 30 V | |||
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90
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AD-3 | + 150 C | Tube | 89 W | Single | 1200 V | 1.7 V | 15 A | 100 nA | 30 V | |||
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105
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AD-3 | + 150 C | Tube | 125 W | Single | 1200 V | 1.7 V | 30 A | 100 nA | 30 V | |||
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188
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 89 W | Single | 1200 V | 1.7 V | 15 A | 100 nA | 30 V | |||
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143
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AD-3 | + 150 C | Tube | 180 W | Single | 1200 V | 1.7 V | 40 A | 100 nA | 30 V |