- Manufacture :
- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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676
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/12A | Through Hole | TO-3PF-3 | + 150 C | Tube | 75 W | Single | 600 V | 2.1 V | 23 A | +/- 100 nA | +/- 20 V | |||
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647
In-stock
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Fairchild Semiconductor | IGBT Transistors Dis Short Circuit Rated IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 75 W | Single | 600 V | 2.2 V | 16 A | +/- 100 nA | +/- 20 V | |||
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208
In-stock
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IXYS | IGBT Transistors 12 Amps 1700V 3.6 Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 75 W | Single | 1.7 kV | 2.84 V | 12 A | 100 nA | +/- 20 V | |||
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44
In-stock
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IXYS | IGBT Transistors 12 Amps 1700 V 7 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 75 W | Single | 1.7 kV | 5.4 V | 6 A | 100 nA | +/- 20 V | |||
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20
In-stock
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IXYS | IGBT Transistors 12 Amps 1700 V 4 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 75 W | Single | 1.7 kV | 3 V | 12 A | 100 nA | +/- 20 V | |||
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2,965
In-stock
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STMicroelectronics | IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar | Through Hole | TO-220-3 | + 150 C | Tube | 75 W | Single | 2.2 V | 14 A | 100 nA | 20 V |
