IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXYN82N120C3H1	GET PRICE	PDF RFQ	35 In-stock	IXYS	IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack	SMD/SMT	SOT-227B-4	+ 150 C	Tube	500 W	Single	1200 V	2.75 V	105 A	100 nA	30 V
IXYH50N120C3	GET PRICE	PDF RFQ	28 In-stock	IXYS	IGBT Transistors XPT IGBT C3-Class 1200V/105A	Through Hole	TO-247-3	+ 150 C	Tube	625 W	Single	1200 V	2.5 V	105 A	100 nA	30 V
IXYH40N90C3	GET PRICE	PDF RFQ	30 In-stock	IXYS	IGBT Transistors GenX3 900V XPT IGBTs	Through Hole	TO-247-3	+ 175 C	Tube	600 W	Single	900 V	2.2 V	105 A	100 nA	30 V
IRGPS60B120KDP	GET PRICE	PDF RFQ	200 In-stock	IR / Infineon	IGBT Transistors 1200V UltraFast 5-40kHz	Through Hole	TO-274-3	+ 150 C	Tube	595 W	Single	1.2 kV	2.33 V	105 A	100 nA	+/- 20 V

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