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Maximum Operating Temperature :
Packaging :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGP4063DPBF
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RFQ
5,000
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IR / Infineon IGBT Transistors 600V UltraFast Trnch Appliance motion app Through Hole TO-247-3   Tube 330 W Single 600 V 2.14 V 96 A   +/- 20 V
AUIRGP4063D
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RFQ
57
In-stock
Infineon Technologies IGBT Transistors 600V CO-PACKAUTO TRENCH IGBT Through Hole TO-247-3   Tube 330 W   600 V 2.14 V 96 A    
IRGP4063PBF
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RFQ
85
In-stock
Infineon Technologies IGBT Transistors 600V 96A Through Hole TO-247-3   Tube 330 W Single 600 V 2.14 V 96 A   +/- 20 V
APT54GA60BD30
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RFQ
51
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-247-3 + 150 C Bulk 416 W Single 600 V 2 V 96 A +/- 100 nA +/- 30 V
AUIRGP4063D-E
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RFQ
75
In-stock
IR / Infineon IGBT Transistors Automotive 600V Trench IGBT Through Hole TO-247-3   Tube 330 W   600 V 2.14 V 96 A 100 nA 20 V
IRGP4068DPBF
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RFQ
249
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast Trnch w/Ultra-Low VF Diode Through Hole TO-247-3   Tube 330 W Single 600 V 2.14 V 96 A   +/- 20 V
IRGP4068D-EPBF
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RFQ
164
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast Trnch w/Ultra-Low VF Diode Through Hole TO-247AD-3   Tube 330 W Single 600 V 2.14 V 96 A   +/- 20 V
IRGP4063D-EPBF
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RFQ
54
In-stock
IR / Infineon IGBT Transistors 600V UltraFast IGBT 48A 5uS 1.65V VCE Through Hole TO-247AD-3   Tube 330 W   600 V 2.05 V 96 A 100 nA 20 V
IRGP4063-EPBF
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RFQ
36
In-stock
IR / Infineon IGBT Transistors 600V 96A Through Hole TO-247-3 + 175 C Tube 330 W Single 600 V 1.65 V 96 A 100 nA +/- 20 V
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