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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXA33IF1200HB
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RFQ
30
In-stock
IXYS IGBT Transistors XPT IGBT Copack Through Hole TO-247-3 + 150 C Tube 250 W Single 1200 V 1.8 V 58 A 500 nA 20 V
RGTH60TS65DGC11
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RFQ
377
In-stock
ROHM Semiconductor IGBT Transistors 650V 30A IGBT Stop Trench Through Hole   + 175 C Tube 194 W   650 V 1.6 V 58 A +/- 200 nA +/- 30 V
RGTH60TS65GC11
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RFQ
440
In-stock
ROHM Semiconductor IGBT Transistors 650V 30A IGBT Stop Trench Through Hole   + 175 C Tube 194 W   650 V 1.6 V 58 A +/- 200 nA +/- 30 V
IXA37IF1200HJ
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RFQ
60
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs Through Hole ISOPLUS 247-3 + 150 C Tube 195 W Single 1200 V 1.8 V 58 A 500 nA 20 V
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