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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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98
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | Through Hole | TO-247-3 | + 150 C | 543 W | Single | 650 V | 1.9 V | 118 A | 250 nA | 30 V | |||
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38
In-stock
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IXYS | IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT | Through Hole | TO-247AD-3 | + 175 C | Tube | 455 W | Single | 650 V | 1.8 V | 118 A | 100 nA | 20 V |
