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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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246
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | 250 W | Single | 1.2 kV | 3.2 V | 36 A | 480 nA | 30 V | |||
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30
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 230 W | Single | 1200 V | 4 V | 36 A | 100 nA | 30 V | ||
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410
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast Trench IGBT | Through Hole | TO-220AB-3 | + 175 C | Tube | 206 W | Single | 600 V | 1.95 V | 36 A | +/- 20 V |
