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Package / Case :
Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXA20I1200PB
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RFQ
200
In-stock
IXYS IGBT Transistors XPT IGBT Through Hole TO-220-3 + 150 C Tube 130 W Single 1200 V 1.8 V 33 A 500 nA 20 V
IRG7PH30K10PBF
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RFQ
94
In-stock
IR / Infineon IGBT Transistors Trnch IGBT 1200V 10A single IGBT Through Hole TO-247-3 + 175 C Tube 210 W Single 1.2 kV 2.05 V 33 A 100 nA +/- 30 V
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