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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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391
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 246 W | Single | 600 V | 1.6 V | 67 A | 100 nA | +/- 20 V | ||
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40
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | SMD/SMT | D3PAK-3 | + 150 C | 272 W | Single | 1.2 kV | 1.7 V | 67 A | 600 nA | 30 V | |||
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|
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246
In-stock
|
Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 246 W | Single | 600 V | 1.6 V | 67 A | 100 nA | +/- 20 V |
