IGBT Transistors - Kaimeite

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3 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXXH60N65B4H1	GET PRICE	PDF RFQ	26 In-stock	IXYS	IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT	Through Hole	TO-247AD-3	+ 175 C	Tube	380 W	Single	650 V	1.7 V	116 A	100 nA	20 V
IXXH60N65B4	GET PRICE	PDF RFQ	37 In-stock	IXYS	IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT	Through Hole	TO-247AD-3	+ 175 C	Tube	455 W	Single	650 V	1.7 V	116 A	100 nA	20 V
IRG7PSH50UDPBF	GET PRICE	PDF RFQ	23 In-stock	IR / Infineon	IGBT Transistors IGBT DISCRETES	Through Hole	TO-274AA-3	+ 150 C	Tube	462 W	Single	1.2 kV	2 V	116 A	+/- 200 nA	+/- 30 V

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