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Package / Case :
Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGA50S110P
1+
$2.920
10+
$2.480
100+
$2.150
250+
$2.040
RFQ
463
In-stock
Fairchild Semiconductor IGBT Transistors 1100 V, 50 A Shorted-anode IGBT Through Hole TO-3PN + 175 C Tube 300 W   1100 V 2.7 V 50 A 500 nA 25 V
FGH25T120SMD
1+
$5.830
10+
$4.950
100+
$4.300
250+
$4.080
RFQ
4,350
In-stock
Fairchild Semiconductor IGBT Transistors 1200V, 25A Field Stop Trench IGBT Through Hole TO-247G03-3 + 175 C Tube 428 W Single 1200 V 1.9 V 50 A 400 nA + /- 25 V
FGA50N100BNTD2
1+
$7.040
10+
$6.360
25+
$6.070
100+
$5.270
RFQ
62
In-stock
Fairchild Semiconductor IGBT Transistors N-ch / 50A 1000V Through Hole TO-3PN + 150 C Tube 156 W Single 1000 V 1.5 V 50 A 500 nA 25 V
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