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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXGH30N120B3D1
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305
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IXYS IGBT Transistors 60 Amps 1200V Through Hole TO-247-3 + 150 C Tube 300 W   1.2 kV 2.96 V 50 A 100 nA +/- 20 V
IXGH24N170
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RFQ
145
In-stock
IXYS IGBT Transistors 50 Amps 1700V 3.3 V Rds Through Hole TO-247-3 + 150 C Tube 250 W Single 1.7 kV 2.5 V 50 A 100 nA +/- 20 V
IXBH20N300
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49
In-stock
IXYS IGBT Transistors Through Hole TO-247-3 + 150 C Tube 250 W Single 3 kV 2.7 V 50 A +/- 100 nA +/- 20 V
IXDR30N120D1
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RFQ
42
In-stock
IXYS IGBT Transistors 30 Amps 1200V Through Hole ISOPLUS247-3 + 150 C Tube 200 W Single 1.2 kV 2.4 V 50 A 500 nA +/- 20 V
IXDR30N120
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RFQ
19
In-stock
IXYS IGBT Transistors 30 Amps 1200V Through Hole ISOPLUS247-3 + 150 C Tube 200 W Single 1.2 kV 2.4 V 50 A 500 nA +/- 20 V
IXGT24N170
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RFQ
IXYS IGBT Transistors 24 Amps 1200 V 3.3 V Rds SMD/SMT TO-268-3 + 150 C Tube 250 W Single 1.7 kV 2.5 V 50 A 100 nA +/- 20 V
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