- Gate-Emitter Leakage Current :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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488
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 nA | 20 V | |||
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477
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 mA | 20 V | |||
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227
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 nA | 20 V | |||
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240
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 nA | 20 V | |||
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220
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 mA | 20 V | |||
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230
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 mA | 20 V |
