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Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXGH30N120B3D1
1+
$8.640
10+
$7.810
25+
$7.450
100+
$6.470
RFQ
305
In-stock
IXYS IGBT Transistors 60 Amps 1200V Through Hole TO-247-3 + 150 C Tube 300 W   1.2 kV 2.96 V 50 A 100 nA +/- 20 V
IXGH24N170
1+
$14.610
10+
$13.440
25+
$12.880
100+
$11.350
RFQ
145
In-stock
IXYS IGBT Transistors 50 Amps 1700V 3.3 V Rds Through Hole TO-247-3 + 150 C Tube 250 W Single 1.7 kV 2.5 V 50 A 100 nA +/- 20 V
IRGP4650DPBF
1+
$6.270
10+
$5.670
25+
$5.410
100+
$4.690
RFQ
258
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC Through Hole TO-247-3 + 175 C Tube 134 W   600 V 1.9 V 50 A 100 nA 20 V
IRG7PH35UDPBF
1+
$6.320
10+
$5.710
25+
$5.450
100+
$4.730
RFQ
63
In-stock
Infineon Technologies IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A Through Hole TO-247-3 + 150 C Tube 180 W Single 1.2 kV 1.9 V 50 A 100 nA +/- 30 V
IHW25N120E1XKSA1
1+
$3.380
10+
$2.870
100+
$2.490
250+
$2.360
RFQ
44
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 150 C Tube 231 W Single 1.2 kV 1.5 V 50 A 100 nA +/- 20 V
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