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Package / Case :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGWA25S120DF3
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200
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STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO247-3 + 175 C Tube 375 W Single 1.2 kV 1.6 V 50 A 250 nA +/- 20 V
STGW25S120DF3
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RFQ
180
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STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO247-3 + 175 C Tube 375 W Single 1.2 kV 1.6 V 50 A 250 nA +/- 20 V
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600
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STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole   + 175 C   375 W Single 1200 V 2.5 V 50 A 250 nA 20 V
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RFQ
600
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STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole   + 175 C   375 W Single 1200 V 2.5 V 50 A 250 nA 20 V
STGWA25M120DF3
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RFQ
597
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STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-247-3 + 175 C Tube 375 W Single 1.2 kV 1.85 V 50 A 250 nA 20 V
STGW25H120F2
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RFQ
516
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-247-3 + 175 C Tube 375 W Single 1200 V 2.1 V 50 A 250 nA 20 V
STGW25H120DF2
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STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-247-3 + 175 C Tube 375 W Single 1200 V 2.1 V 50 A 250 nA 20 V
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