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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IHW25N120E1XKSA1
1+
$3.380
10+
$2.870
100+
$2.490
250+
$2.360
RFQ
44
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 150 C Tube 231 W Single 1.2 kV 1.5 V 50 A 100 nA +/- 20 V
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