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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXDR30N120D1
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RFQ
42
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IXYS IGBT Transistors 30 Amps 1200V Through Hole ISOPLUS247-3 + 150 C Tube 200 W Single 1.2 kV 2.4 V 50 A 500 nA +/- 20 V
IXDR30N120
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RFQ
19
In-stock
IXYS IGBT Transistors 30 Amps 1200V Through Hole ISOPLUS247-3 + 150 C Tube 200 W Single 1.2 kV 2.4 V 50 A 500 nA +/- 20 V
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