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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGH25T120SMD
1+
$5.830
10+
$4.950
100+
$4.300
250+
$4.080
RFQ
4,350
In-stock
Fairchild Semiconductor IGBT Transistors 1200V, 25A Field Stop Trench IGBT Through Hole TO-247G03-3 + 175 C Tube 428 W Single 1200 V 1.9 V 50 A 400 nA + /- 25 V
IRGP4650DPBF
1+
$6.270
10+
$5.670
25+
$5.410
100+
$4.690
RFQ
258
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC Through Hole TO-247-3 + 175 C Tube 134 W   600 V 1.9 V 50 A 100 nA 20 V
IRGP4660DPBF
1+
$7.690
10+
$6.950
25+
$6.620
100+
$5.750
RFQ
156
In-stock
IR / Infineon IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC Through Hole TO-247-3 + 175 C Tube 134 W   600 V 1.9 V 50 A 70 uA 20 V
IRGP4650D-EPBF
1+
$6.650
10+
$6.010
25+
$5.730
100+
$4.970
RFQ
77
In-stock
IR / Infineon IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC Through Hole TO-247AD-3 + 175 C Tube 134 W   600 V 1.9 V 50 A 100 nA 20 V
IRGP4660D-EPBF
1+
$7.970
10+
$7.200
25+
$6.870
50+
$6.400
RFQ
73
In-stock
IR / Infineon IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC Through Hole TO-247AD-3 + 175 C Tube 134 W   600 V 1.9 V 50 A 70 uA 20 V
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