- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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GET PRICE |
1,401
In-stock
|
STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A... | SMD/SMT | D2PAK-3 | + 175 C | Reel | 260 W | Single | 600 V | 1.55 V | 60 A | + / - 250 nA | +/- 20 V | |||
|
GET PRICE |
968
In-stock
|
STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A ... | SMD/SMT | D2PAK-3 | + 175 C | Reel | 260 W | Single | 600 V | 1.85 V | 60 A | + / - 250 nA | +/- 20 V | |||
|
GET PRICE |
4,850
In-stock
|
IXYS | IGBT Transistors GenX3 1200V IGBT | SMD/SMT | TO-263-3 | + 150 C | Tube | 300 W | Single | 1.2 kV | 2.96 V | 60 A | 100 nA | +/- 20 V | |||
|
GET PRICE |
35
In-stock
|
IXYS | IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A | SMD/SMT | TO-263-3 | + 150 C | Tube | 220 W | 600 V | 2.6 V | 60 A | 100 nA | +/- 20 V | ||||
|
GET PRICE |
500
In-stock
|
STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A... | SMD/SMT | D2PAK-3 | + 175 C | Reel | 260 W | Single | 600 V | 1.55 V | 60 A | + / - 250 nA | +/- 20 V | |||
|
GET PRICE |
835
In-stock
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK-3 | + 175 C | Reel | 258 W | Single | 600 V | 1.85 V | 60 A | 250 nA | 20 V | |||
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VIEW | STMicroelectronics | IGBT Transistors 30 A 600V FAST IGBT | SMD/SMT | D2PAK-3 | + 150 C | Reel | 200 W | Single | 600 V | 1.8 V | 60 A | +/- 20 V |