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Package / Case :
Maximum Operating Temperature :
Packaging :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGB30H60DFB
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RFQ
1,401
In-stock
STMicroelectronics IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A... SMD/SMT D2PAK-3 + 175 C Reel 260 W Single 600 V 1.55 V 60 A + / - 250 nA +/- 20 V
STGB30V60F
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RFQ
968
In-stock
STMicroelectronics IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A ... SMD/SMT D2PAK-3 + 175 C Reel 260 W Single 600 V 1.85 V 60 A + / - 250 nA +/- 20 V
IXGA30N120B3
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RFQ
4,850
In-stock
IXYS IGBT Transistors GenX3 1200V IGBT SMD/SMT TO-263-3 + 150 C Tube 300 W Single 1.2 kV 2.96 V 60 A 100 nA +/- 20 V
IXGA30N60C3C1
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RFQ
35
In-stock
IXYS IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A SMD/SMT TO-263-3 + 150 C Tube 220 W   600 V 2.6 V 60 A 100 nA +/- 20 V
STGB30H60DLFB
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RFQ
500
In-stock
STMicroelectronics IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A... SMD/SMT D2PAK-3 + 175 C Reel 260 W Single 600 V 1.55 V 60 A + / - 250 nA +/- 20 V
STGB30V60DF
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RFQ
835
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar SMD/SMT D2PAK-3 + 175 C Reel 258 W Single 600 V 1.85 V 60 A 250 nA 20 V
STGB20NC60V
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RFQ
STMicroelectronics IGBT Transistors 30 A 600V FAST IGBT SMD/SMT D2PAK-3 + 150 C Reel 200 W Single 600 V 1.8 V 60 A   +/- 20 V
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