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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG8P40N120KDPBF
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RFQ
59
In-stock
IR / Infineon IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AC-3 + 150 C Tube 305 W Single 1200 V 1.7 V 60 A 200 nA 30 V
IRGP4262DPBF
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RFQ
50
In-stock
IR / Infineon IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT Through Hole TO-247AC-3 + 175 C Tube 250 W Single 650 V 1.7 V 60 A 100 nA 20 V
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