IGBT Transistors - Kaimeite

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5 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXGX120N60A3	GET PRICE	PDF RFQ	243 In-stock	IXYS	IGBT Transistors 120 Amps 600V	Through Hole	PLUS 247-3	+ 150 C	Tube	780 W	Single	600 V	1.2 V	200 A	400 nA	+/- 20 V
APT75GN120LG	GET PRICE	PDF RFQ	105 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-264-3	+ 150 C		833 W	Single	1.2 kV	1.7 V	200 A	600 nA	30 V
IXGH36N60B3D1	GET PRICE	PDF RFQ	63 In-stock	IXYS	IGBT Transistors 36 Amps 600V	Through Hole	TO-247	+ 150 C	Tube	250 W	Single	600 V	1.8 V	200 A	+/- 100 nA	+/- 20 V
IXyH100N65C3	GET PRICE	PDF RFQ	98 In-stock	IXYS	IGBT Transistors 650V/200A XPT C3-Class TO-247	Through Hole	TO-247-3	+ 175 C	Tube	830 W	Single	650 V	1.85 V	200 A	100 nA	30 V
NGTB50N120FL2WAG	GET PRICE	PDF RFQ	30 In-stock	onsemi	IGBT Transistors 1200V/50 FAST IGBT FSII T	Through Hole	TO-247-4	+ 175 C	Tube	268 W		1200 V	2.8 V	200 A	200 nA	20 V

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