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Package / Case :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB40N135IHRWG
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onsemi IGBT Transistors 1350V/40A IGBT FSII TO-24 Through Hole TO-247 + 175 C Tube 394 W Single 1350 V 2.4 V 80 A 100 nA 25 V
IHW40N135R3FKSA1
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240
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Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 429 W Single 1350 V 2 V 80 A 100 nA 20 V
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Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop RC Through Hole TO-247-3 + 175 C Tube 429 W Single 1350 V 2 V 80 A 100 nA 20 V
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