IGBT Transistors - Kaimeite

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3 products

PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IKW50N60H3FKSA1		GET PRICE	PDF RFQ	3,500 In-stock	Infineon Technologies	IGBT Transistors HIGH SPEED SWITCHING	Through Hole	TO-247-3	+ 175 C	Tube	333 W	Single	600 V	2.25 V	100 A	100 nA	20 V
IKW50N60H3	1+ $5.220 10+ $4.440 100+ $3.850 250+ $3.650		PDF RFQ	213 In-stock	Infineon Technologies	IGBT Transistors HIGH SPEED SWITCHING	Through Hole	TO-247-3	+ 175 C	Tube	333 W	Single	600 V	2.25 V	100 A	100 nA	20 V
IGW50N60H3	1+ $4.620 10+ $3.920 100+ $3.400 250+ $3.230		PDF RFQ	272 In-stock	Infineon Technologies	IGBT Transistors 600V 50A 333W	Through Hole	TO-247-3	+ 150 C	Tube	333 W		600 V	1.85 V	100 A	100 nA	20 V

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