IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
APT33GF120BRG	GET PRICE	PDF RFQ	35 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ...	Through Hole	TO-247-3	+ 150 C	Tube	297 W	Single	1.2 kV	2.5 V	52 A	100 nA	30 V
IRG4PC50KPBF	GET PRICE	PDF RFQ	60 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 8-25kHz	Through Hole	TO-247-3		Tube	200 W	Single	600 V	2.2 V	52 A		+/- 20 V
STGWA19NC60HD	GET PRICE	PDF RFQ	6,000 In-stock	STMicroelectronics	IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode	Through Hole	TO-247	+ 150 C	Tube	208 W	Single	600 V	1.8 V	52 A	+/- 100 nA	+/- 20 V
IRG4PC50KDPBF	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT	Through Hole	TO-247-3	+ 150 C	Tube	104 W	Single	600 V	2.2 V	52 A		+/- 20 V

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