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Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGP15N60UNDF
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RFQ
821
In-stock
Fairchild Semiconductor IGBT Transistors 600V 15A NPT IGBT Through Hole TO-220-3 + 150 C Tube 178 W Single 600 V 2.7 V 30 A +/- 10 uA +/- 20 V
FGPF15N60UNDF
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RFQ
30,300
In-stock
Fairchild Semiconductor IGBT Transistors 600V, 15A Short Circuit Rated IGBT Through Hole TO-220F   Tube 17 W   600 V 2.2 V 30 A    
FGA15S125P
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RFQ
4,160
In-stock
Fairchild Semiconductor IGBT Transistors FORECAST FG Through Hole TO-3PN-3 + 175 C Tube 136 W Single 1250 V 2.72 V 30 A 500 nA 25 V
FPAB30BH60B
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RFQ
2,500
In-stock
Fairchild Semiconductor IGBT Transistors SPM for Front-End Rectifier;Motion-SPM Through Hole   + 125 C Tube 104 W   600 V   30 A 250 uA  
FGA30N120FTDTU
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RFQ
63
In-stock
Fairchild Semiconductor IGBT Transistors 1200V 30A FS Through Hole TO-3P-3 + 150 C Tube 339 W Single 1200 V 2 V 30 A   +/- 25 V
FGH15T120SMD_F155
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RFQ
420
In-stock
Fairchild Semiconductor IGBT Transistors 1200V, 15A, Field Stop Trench IGBT Through Hole TO-247G03-3 + 175 C Tube 333 W Single 1200 V 1.9 V 30 A 400 nA + /- 25 V
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