- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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821
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 15A NPT IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 178 W | Single | 600 V | 2.7 V | 30 A | +/- 10 uA | +/- 20 V | |||
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30,300
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V, 15A Short Circuit Rated IGBT | Through Hole | TO-220F | Tube | 17 W | 600 V | 2.2 V | 30 A | |||||||
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4,160
In-stock
|
Fairchild Semiconductor | IGBT Transistors FORECAST FG | Through Hole | TO-3PN-3 | + 175 C | Tube | 136 W | Single | 1250 V | 2.72 V | 30 A | 500 nA | 25 V | |||
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2,500
In-stock
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Fairchild Semiconductor | IGBT Transistors SPM for Front-End Rectifier;Motion-SPM | Through Hole | + 125 C | Tube | 104 W | 600 V | 30 A | 250 uA | |||||||
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63
In-stock
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Fairchild Semiconductor | IGBT Transistors 1200V 30A FS | Through Hole | TO-3P-3 | + 150 C | Tube | 339 W | Single | 1200 V | 2 V | 30 A | +/- 25 V | ||||
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420
In-stock
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Fairchild Semiconductor | IGBT Transistors 1200V, 15A, Field Stop Trench IGBT | Through Hole | TO-247G03-3 | + 175 C | Tube | 333 W | Single | 1200 V | 1.9 V | 30 A | 400 nA | + /- 25 V |