IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXBH12N300	GET PRICE	PDF RFQ	97 In-stock	IXYS	IGBT Transistors	Through Hole	TO-247-3	+ 150 C		160 W	Single	3 kV	2.8 V	30 A	+/- 100 nA	+/- 20 V
IXBT12N300HV	GET PRICE	PDF RFQ	40 In-stock	IXYS	IGBT Transistors	SMD/SMT	TO-268-2	+ 150 C		160 W	Single	3 kV	2.8 V	30 A	+/- 100 nA	+/- 20 V
FII30-06D	GET PRICE	PDF RFQ	17 In-stock	IXYS	IGBT Transistors 30 Amps 600V	Through Hole	ISOPLUS i4-PAC-5	+ 150 C	Tube	100 W	Dual	600 V	1.9 V	30 A	200 nA	+/- 20 V
IXGH15N120B2D1	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 30 Amps 1200V 2.7 V Rds	Through Hole			Tube			1200 V		30 A

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