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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG8P15N120KDPBF
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RFQ
85
In-stock
IR / Infineon IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AC-3 + 150 C Tube 125 W Single 1200 V 1.7 V 30 A 100 nA 30 V
IRG8P15N120KD-EPBF
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RFQ
105
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IR / Infineon IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AD-3 + 150 C Tube 125 W Single 1200 V 1.7 V 30 A 100 nA 30 V
IRG7IA19UPBF
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RFQ
5
In-stock
IR / Infineon IGBT Transistors 330V 15A 1.57VFP PDP SMPS Through Hole TO-220-3   Tube 35 W   360 V 1.52 V 30 A    
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