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Package / Case :
Maximum Operating Temperature :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4PH40KDPBF
1+
$5.050
10+
$4.290
25+
$4.210
100+
$3.720
RFQ
3,848
In-stock
Infineon Technologies IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT Through Hole TO-247-3 + 150 C Tube 160 W Single 1.2 kV 3.4 V 30 A   +/- 20 V
IHW15N120E1XKSA1
1+
$2.110
10+
$1.790
100+
$1.440
500+
$1.260
RFQ
167
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 150 C Tube 156 W Single 1.2 kV 1.5 V 30 A 100 nA +/- 20 V
STGWA15S120DF3
1+
$6.900
10+
$6.240
25+
$5.950
100+
$5.170
RFQ
200
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO247-3 + 175 C Tube 259 W Single 1.2 kV 1.55 V 30 A 250 nA +/- 20 V
IRG4PH40UPBF
1+
$4.440
10+
$3.770
25+
$3.710
100+
$3.270
RFQ
213
In-stock
Infineon Technologies IGBT Transistors 1200V UltraFast 5-40kHz Through Hole TO-247-3   Tube 160 W Single 1.2 kV 3.5 V 30 A   +/- 20 V
STGW15S120DF3
1+
$6.670
10+
$6.030
25+
$5.750
100+
$4.990
RFQ
165
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO247-3 + 175 C Tube 259 W Single 1.2 kV 1.55 V 30 A 250 nA +/- 20 V
NGTB15N120IHWG
1+
$3.180
10+
$2.700
100+
$2.350
250+
$2.230
RFQ
163
In-stock
onsemi IGBT Transistors LC IH RC OSV Through Hole TO-247-3 + 175 C Tube 278 W Single 1.2 kV 2.1 V 30 A 100 nA +/- 20 V
IRG4PH40KPBF
1+
$4.060
10+
$3.450
100+
$2.990
250+
$2.840
VIEW
RFQ
Infineon Technologies IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB... Through Hole TO-247-3 + 150 C Tube 160 W Single 1.2 kV 3.4 V 30 A   +/- 20 V
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