- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Gate-Emitter Leakage Current :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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3,848
In-stock
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Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 3.4 V | 30 A | +/- 20 V | |||||
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167
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 150 C | Tube | 156 W | Single | 1.2 kV | 1.5 V | 30 A | 100 nA | +/- 20 V | ||||
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200
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 259 W | Single | 1.2 kV | 1.55 V | 30 A | 250 nA | +/- 20 V | ||||
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213
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | Tube | 160 W | Single | 1.2 kV | 3.5 V | 30 A | +/- 20 V | ||||||
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165
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 259 W | Single | 1.2 kV | 1.55 V | 30 A | 250 nA | +/- 20 V | ||||
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163
In-stock
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onsemi | IGBT Transistors LC IH RC OSV | Through Hole | TO-247-3 | + 175 C | Tube | 278 W | Single | 1.2 kV | 2.1 V | 30 A | 100 nA | +/- 20 V | ||||
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VIEW | Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB... | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 3.4 V | 30 A | +/- 20 V |