IGBT Transistors - Kaimeite

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5 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
STGF15M65DF2	GET PRICE	PDF RFQ	923 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A l...	Through Hole	TO-220FP-3	+ 175 C		31 W	Single	650 V	1.55 V	30 A	+ / - 250 uA	+/- 20 V
STGP15M65DF2	GET PRICE	PDF RFQ	956 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V, 15 A ...	Through Hole	TO-220-3	+ 175 C		136 W	Single	650 V	1.55 V	30 A	+ / - 250 uA	+/- 20 V
STGWA15S120DF3	GET PRICE	PDF RFQ	200 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	259 W	Single	1.2 kV	1.55 V	30 A	250 nA	+/- 20 V
STGB15M65DF2	GET PRICE	PDF RFQ	963 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A l...	SMD/SMT	D2PAK-3	+ 175 C	Reel	136 W	Single	650 V	1.55 V	30 A	+ / - 250 uA	+/- 20 V
STGW15S120DF3	GET PRICE	PDF RFQ	165 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	259 W	Single	1.2 kV	1.55 V	30 A	250 nA	+/- 20 V

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