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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB15N60S1EG
1+
$1.480
10+
$1.260
100+
$0.968
500+
$0.856
RFQ
1,593
In-stock
onsemi IGBT Transistors 15A 600V IGBT Through Hole TO-220   Tube 47 W   600 V 1.7 V 30 A 100 nA 20 V
IRG8P15N120KDPBF
1+
$5.570
10+
$4.730
25+
$4.650
100+
$4.100
RFQ
85
In-stock
IR / Infineon IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AC-3 + 150 C Tube 125 W Single 1200 V 1.7 V 30 A 100 nA 30 V
IRG8P15N120KD-EPBF
1+
$6.160
10+
$5.240
25+
$5.150
100+
$4.540
RFQ
105
In-stock
IR / Infineon IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AD-3 + 150 C Tube 125 W Single 1200 V 1.7 V 30 A 100 nA 30 V
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