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Package / Case :
Pd - Power Dissipation :
Maximum Gate Emitter Voltage :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGA30N120FTDTU
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63
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Fairchild Semiconductor IGBT Transistors 1200V 30A FS Through Hole TO-3P-3 + 150 C Tube 339 W Single 1200 V 2 V 30 A   +/- 25 V
NGTB15N120FLWG
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onsemi IGBT Transistors 1200V/15A IGBT SOLAR/UPS Through Hole TO-247 + 150 C Tube 156 W Single 1200 V 2 V 30 A 100 nA 20 V
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