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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGPF15N60UNDF
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RFQ
30,300
In-stock
Fairchild Semiconductor IGBT Transistors 600V, 15A Short Circuit Rated IGBT Through Hole TO-220F   Tube 17 W   600 V 2.2 V 30 A    
IGW15T120
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RFQ
4,110
In-stock
Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 1200V 15A Through Hole TO-247-3 + 150 C Tube 110 W Single 1200 V 2.2 V 30 A 100 nA +/- 20 V
NGTB15N120LWG
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RFQ
296
In-stock
onsemi IGBT Transistors 1200V/15A IGBT LPT TO-247 Through Hole TO-247   Tube 156 W   1200 V 2.2 V 30 A 100 nA 20 V
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