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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Maximum Operating Temperature Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
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RFQ
600
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STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole + 175 C 259 W Single 1200 V 2.5 V 30 A +/- 250 nA 20 V
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GET PRICE
RFQ
600
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole + 175 C 259 W Single 1200 V 2.5 V 30 A +/- 250 nA 20 V
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