IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	STGWA15M120DF3	600+ $4.500 1200+ $3.920 3000+ $3.780	GET PRICE VIEW	PDF RFQ		STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	283 W	Single	1200 V	1.85 V	30 A	250 nA	20 V
	STGW15M120DF3	600+ $4.340 1200+ $3.790 3000+ $3.650	GET PRICE VIEW	PDF RFQ		STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	283 W	Single	1200 V	1.85 V	30 A	250 nA	20 V

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