IGBT Transistors - Kaimeite

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5 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRG4PH40KDPBF	GET PRICE	PDF RFQ	3,848 In-stock	Infineon Technologies	IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT	Through Hole	TO-247-3	+ 150 C	Tube	160 W	Single	1.2 kV	3.4 V	30 A		+/- 20 V
IXBH12N300	GET PRICE	PDF RFQ	97 In-stock	IXYS	IGBT Transistors	Through Hole	TO-247-3	+ 150 C		160 W	Single	3 kV	2.8 V	30 A	+/- 100 nA	+/- 20 V
IXBT12N300HV	GET PRICE	PDF RFQ	40 In-stock	IXYS	IGBT Transistors	SMD/SMT	TO-268-2	+ 150 C		160 W	Single	3 kV	2.8 V	30 A	+/- 100 nA	+/- 20 V
IRG4PH40UPBF	GET PRICE	PDF RFQ	213 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 5-40kHz	Through Hole	TO-247-3		Tube	160 W	Single	1.2 kV	3.5 V	30 A		+/- 20 V
IRG4PH40KPBF	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB...	Through Hole	TO-247-3	+ 150 C	Tube	160 W	Single	1.2 kV	3.4 V	30 A		+/- 20 V

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