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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB15N120IHWG
1+
$3.180
10+
$2.700
100+
$2.350
250+
$2.230
RFQ
163
In-stock
onsemi IGBT Transistors LC IH RC OSV Through Hole TO-247-3 + 175 C Tube 278 W Single 1.2 kV 2.1 V 30 A 100 nA +/- 20 V
STGW15H120F2
1+
$5.000
10+
$5.000
25+
$5.000
100+
$4.000
RFQ
2,000
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-247-3 + 175 C Tube 259 W Single 1200 V 2.1 V 30 A 250 nA 20 V
STGW15H120DF2
1+
$5.940
10+
$5.370
25+
$5.120
100+
$4.450
RFQ
398
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-247-3 + 175 C Tube 259 W Single 1200 V 2.1 V 30 A 250 nA 20 V
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